maximum ratings (t a =25c) cbr50- cbr50- cbr50- cbr50- cbr50- symbol 020p 040p 060p 080p 100p units peak repetitive reverse voltage v rrm 200 400 600 800 1000 v dc blocking voltage v r 200 400 600 800 1000 v rms reverse voltage v r(rms) 140 280 420 560 700 v average forward current (t c =55c) i o 50 a peak forward surge current i fsm 400 a operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 1.5 c/w rms isolation voltage (case to lead) v iso 2500 v ac electrical characteristics per diode (t a =25c unless otherwise noted) symbol test conditions typ max units i r v r =rated v rrm, t c =25c 5.0 a i r v r =rated v rrm , t c =125c 500 a v f i f =25a 1.1 v c j v r =4.0v, f=1.0mhz 300 pf CBR50-020P series 50 amp silicon bridge rectifier 200 thru 1000 volts case fp central semiconductor corp. tm r0 (31-august 2004) description: the central semiconductor CBR50-020P series types are silicon single phase full wave bridge rectifiers designed for general purpose applications. the molded epoxy case has a built in metal baseplate for heat sink mounting. marking code: full part number
central semiconductor corp. tm case fp - mechanical outline CBR50-020P series 50 amp silicon bridge rectifier 200 thru 1000 volts r0 (31-august 2004) marking code: full part number symbol min max min max a 1.115 1.135 28.32 28.83 b 0.692 0.732 17.58 18.59 c 1.115 1.135 28.32 28.83 d 0.542 0.582 13.77 14.78 e 0.632 0.672 16.05 17.07 f (dia.) 0.200 0.220 5.08 5.59 g 0.632 0.672 16.05 17.07 h 0.740 0.840 18.80 21.34 j 0.290 0.310 7.37 7.87 k 0.030 0.034 0.76 0.86 l m (dia.) case fp (rev:r1) 2.39 0.940 dimensions inches millimeters 6.35 0.250
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